Mask for photolithography, method of manufacturing the same and method of manufacturing substrate using the same

ABSTRACT

A mask for photolithography includes: a transparent substrate; a phase shift pattern on the transparent substrate and configured to change a phase of light; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.14/752,415, filed Jun. 26, 2015, which claims priority to and thebenefit of Korean Patent Application No. 10-2014-0099687, filed on Aug.4, 2014, the entire contents of both of which are incorporated herein byreference.

BACKGROUND 1. Field

Aspects of example embodiments of the present invention relate to a maskfor photolithography, a method of manufacturing the mask, a method ofmanufacturing a substrate using the mask.

2. Description of the Related Art

Recently, a display apparatus having light weight and small size hasbeen developed. A cathode ray tube (CRT) display apparatus has been useddue to a performance and a competitive price. However the CRT displayapparatus may be relatively large and lack portability. Therefore adisplay apparatus such as a plasma display apparatus, a liquid crystaldisplay apparatus, and an organic light emitting display apparatus hasbeen highly regarded due to small size, light weight, and lowpower-consumption.

As the resolution of the liquid crystal display apparatus increases,improved precision of pattering may also be increased. However, theprecision of pattering is limited due to the resolution of a stepper ormask. Additionally, as the structure of the liquid crystal displayapparatus becomes more complex, it may be difficult to form a precisepattern on a substrate having uneven thickness.

SUMMARY

Aspects of example embodiments of the present invention relate to a maskfor photolithography, a method of manufacturing the mask, a method ofmanufacturing a substrate using the mask. For example, exampleembodiments of the present invention relate to a mask forphotolithography to manufacture a liquid crystal display apparatus, amethod of manufacturing the mask, a method of manufacturing a substrateusing the mask.

Aspects of example embodiments of the present invention include a maskfor photolithography having improved resolution.

Aspects of example embodiments of the present invention also provide amethod of manufacturing the mask.

Aspects of example embodiments of the present invention also provide amethod of manufacturing a substrate using the mask.

According to example embodiments of the present invention, a mask forphotolithography includes: a transparent substrate; a phase shiftpattern on the transparent substrate and configured to change a phase oflight; a dielectric layer on the transparent substrate; and a negativerefractive-index meta material layer on the dielectric layer.

The phase shift pattern may have a second width and may define anopening having a first width, wherein a pitch may be defined by a sum ofthe first width and the second width, and the pitch may be less than 4micrometers.

The pitch may be less than 1 micrometers.

The phase shift pattern may include at least one of chrome oxide nitride(CrOxNy) and molybdenum silicide oxide nitride (MoSiOxNy).

A thickness of the phase shift pattern may be 130 nanometers.

The dielectric layer may include polymethyl methacrylate (PMMA).

A thickness of the dielectric layer may be 40 nanometers.

The negative refractive-index meta material layer may be configured togenerate a surface plasmonic resonance or phonon resonance.

A thickness of the negative refractive-index meta material layer may be30 nanometers.

The mask may further include a second dielectric layer on the negativerefractive-index meta material layer.

According to example embodiments of the present invention, in a methodof manufacturing a mask for photolithography, the method includes:forming a phase shift pattern on a transparent substrate; forming adielectric layer on the transparent substrate; and forming a negativerefractive-index meta material layer on the dielectric layer.

The phase shift pattern may have a second width and may define anopening having a first width, wherein a pitch may be defined by a sum ofthe first width and the second width, and the pitch may be less than 4micrometers.

The phase shift pattern may include at least one of chrome oxide nitride(CrOxNy) and molybdenum silicide oxide nitride (MoSiOxNy).

The method may further include performing a plasma hydrophilic treatmenton an upper surface of the phase shift pattern.

The method may further include ashing the dielectric layer.

A thickness of the dielectric layer may be 40 nanometers.

The negative refractive-index meta material layer may include at leastone or more of silver, gold, and aluminum.

A thickness of the negative refractive-index meta material layer may be35 nanometers.

The method may further include providing a second dielectric layer onthe negative refractive-index meta material layer.

According to some embodiments of the present invention, in a method ofmanufacturing a substrate using a mask for photolithography, wherein themask includes: a transparent substrate; a phase shift pattern on thetransparent substrate and configured to change a phase of light; adielectric layer on the transparent substrate; and a negativerefractive-index meta material layer on the dielectric layer, the methodincludes: arranging a substrate on which a photoresist layer is formedto face the mask; exposing light to the photoresist layer through themask, wherein the negative refractive-index meta material layergenerates surface plasmonic resonance or phonon resonance, the surfaceplasmonic resonance or phonon resonance are induced to define anevanescence wave which exponentially decays according to a propagationdistance of an electromagnetic wave for accurate suppression of lighttransfer in a photolithography process; and forming a photoresistpattern by developing the photoresist layer using a developer.

According to example embodiments of the present invention, the mask forphotolithography includes the dielectric layer and the negativerefractive-index meta material layer, so that the mask may have aresolution improvement as a super lens. In addition, the mask includesthe phase shift pattern, so that resolution of the mask may be furtherimproved.

In addition, according to the method of manufacturing a substrate usingthe mask, the upper surface of the phase shift pattern of the mask istreated by plasma hydrophilic treatment, so that quality of thedielectric layer may be improved. In addition, according to the method,thickness of the dielectric layer may be decreased by ashing process ofthe preliminary dielectric layer, so that desired thickness of thedielectric layer may be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the present invention will become moreapparent by describing in some detail example embodiments thereof withreference to the accompanying drawings, in which:

FIG. 1 is a cross-sectional view illustrating a mask forphotolithography according to an example embodiment of the presentinvention;

FIGS. 2 and 3 are cross-sectional views illustrating a method ofmanufacturing a substrate using the mask of FIG. 1;

FIGS. 4 to 7 are cross-sectional views illustrating a method ofmanufacturing the mask of FIG. 1;

FIG. 8 is a cross-sectional view illustrating a mask forphotolithography according to an example embodiment of the presentinvention;

FIG. 9 is a cross-sectional view illustrating a method of manufacturinga substrate using a mask for photolithography according to an exampleembodiment of the present invention; and

FIG. 10 is a cross-sectional view illustrating a method of manufacturinga substrate using a mask for photolithography according to an exampleembodiment of the present invention.

DETAILED DESCRIPTION

Hereinafter, the example embodiments of the present invention will beexplained in some detail with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating a mask forphotolithography according to an example embodiment of the presentinvention.

Referring to FIG. 1, a mask for photolithography includes a transparentsubstrate 100, a phase shift pattern 110, a dielectric layer 120 and anegative refractive-index meta material layer 130.

The transparent substrate 100 passes light, and does not change phase ofthe light. For example, the transparent substrate 100 may includequartz.

The phase shift pattern 110 is arranged on the transparent substrate100. The phase shift pattern 110 changes phase of light, which passesthe phase shift pattern 110. The phase shift pattern 110 may include anysuitable phase shift material, such as chrome oxide nitride (CrOxNy),molybdenum silicide oxide nitride (MoSiOxNy), etc. In addition, thephase shift pattern 110 may have various shapes and configurationsaccording to a pattern to form by photolithography process.

The phase shift pattern 110 includes chrome oxide and may have thicknessof about 130 nm. Accordingly, the phase shift pattern 110 may change aphase of light having about 365 nm of wavelength as 180° (reversal), andmay have about 8% of transmissivity.

The phase shift pattern 110 defines (e.g., is adjacent to) an opening OP(or opening area. A phase of light that passes the opening OP is notchanged. The opening OP may have a first width W1, and the phase shiftpattern 110 may have a second width W2. The sum of the first width W1and the second width W2 is same as a pitch P. Each of the first width W1and the second width W2 may be less than 2 micrometers (μm). Inaddition, the phase shift pattern 110 may have a more precise pattern,so that each of the first width W1 and the second width W2 may be lessthan about 500 nanometers (nm). Thus, the pitch P may be less than about4 μm, or the pitch P may be less than about 1 μm.

The dielectric layer 120 is formed on the transparent substrate 100 onwhich the phase shift pattern 110 is formed. The dielectric layer 120may include any suitable dielectric material. For example, thedielectric layer 120 may include polymethyl methacrylate (PMMA).

The dielectric layer 120 may include polymethyl methacrylate (PMMA) andhave thickness greater than about 10 nm and smaller than about 500 nm.According to some embodiments, the dielectric layer 120 may includepolymethyl methacrylate (PMMA), and have a thickness about 40 nm.

A negative refractive-index meta material layer 130 is formed on thedielectric layer 120. The negative refractive-index meta material layer130 may be formed by using a metal E-beam evaporate method. For example,the negative refractive-index meta material layer 130 may include asuitable metal or conductive material such as silver, gold, aluminum,and the like. The negative refractive-index meta material layer 130 mayhave a thickness less than about 150 nm, and according to someembodiments may have a thickness of about 35 nm.

The negative refractive-index meta material layer 130 may generatesurface plasmonic resonance or phonon resonance. The surface plasmonicresonance or phonon resonance are induced to define an evanescence wavethat exponentially decays according to a propagation distance of anelectromagnetic wave and the method uses the decayed evanescence wavephenomenon for accurate suppression of light transfer in aphotolithography process.

The mask for photolithography according to the present exampleembodiment includes the phase shift pattern 110 and the negativerefractive-index meta material layer 130. Thus, the mask may haveimproved resolution.

FIGS. 2 and 3 are cross-sectional views illustrating a method ofmanufacturing a substrate using the mask of FIG. 1.

Referring to FIGS. 2 and 3, a mask for photolithography includes atransparent substrate 100, a phase shift pattern 110, a dielectric layer120, and a negative refractive-index meta material layer 130. The phaseshift pattern 110 defines an opening OP. The opening OP may have a firstwidth W1, and the phase shift pattern 110 may have a second width W2.Sum of the first width W1 and the second width W2 is same as a pitch P.

The mask is arranged or positioned over a substrate 10 to face thesubstrate 10 (e.g., such that the negative refractive-index metamaterial layer 130 is closest to the substrate 10 compared to thetransparent substrate 100). And then, a photoresist layer 20 a on thesubstrate 10 is exposed to light which passes the mask.

The photoresist layer 20 a is formed on the substrate 10. The substrate10 may be a base substrate or a substrate having a base substrate and ametal pattern on the substrate. For example, the substrate 10 may be atransparent insulation substrate such as a glass substrate ortransparent plastic substrate. The metal pattern may include a thin filmtransistor.

The photoresist layer 20 a includes a photoresist composition. Thephotoresist composition may include a positive photoresist compositionin which a portion of the positive photoresist composition that isexposed to light becomes soluble to a developer. For example, thephotoresist composition may include an acid generator, a resin withincreased alkali solubility due to an acid-catalyzed reaction, an alkalimetallic salt, and/or an organic solvent.

In addition, the photoresist composition may include a negativephotoresist composition in which a portion of the positive photoresistcomposition that is not exposed to light becomes soluble to a developer.For example, the photoresist composition may include an ethylencallyunsaturated compound, a photoiniciator, thermosetting composition,and/or an organic solvent. In this case, the photoresist pattern may beformed on the contrary to a case of positive photoresist composition.

Light passes the opening OP of the mask, so that the photoresist layer20 a is exposed to the light.

At that time, an exposure apparatus arranged or positioned above themask supplies the light, and then the light is passed through the maskto the photoresist layer 20 a on the substrate 10. Due to plasmonicresonance or phonon resonance generated by the dielectric layer 120 andthe negative refractive-index meta material layer 130, an evanescentwave of the light is transmitted to the photoresist layer 20 a on thesubstrate 10.

After that, an exposed portion of the photoresist layer 20 a is removed(e.g., by a developer). A photoresist pattern 20 is formed by removingthe exposed portion of the photoresist layer 20 a. And then, thesubstrate 10 is partially etched using the photoresist pattern.

And then, remaining photoresist pattern 20 may be removed.

Accordingly, a pattern having the pitch P, the first width W1 and thesecond width W2 may be formed on the substrate 10.

For example, the pitch P of the mask may be less than about 4 μm or moreprecisely 1 μm referring to explanation of FIG. 1. Thus, the pitch P ofthe pattern on the substrate 10 may be less than about 4 μm or moreprecisely 1 μm.

FIGS. 4 to 7 are cross-sectional views illustrating a method ofmanufacturing the mask of FIG. 1.

Referring to FIG. 4, a phase shift pattern 110 is formed on atransparent substrate 100.

The transparent substrate 100 passes light, and does not change a phaseof the light. For example, the transparent substrate 110 may includequartz.

The phase shift pattern 110 changes a phase of light that passes thephase shift pattern 110. The phase shift pattern 110 may include anysuitable phase shift material, such as chrome oxide nitride (CrOxNy),molybdenum silicide oxide nitride (MoSiOxNy), etc. In addition, thephase shift pattern 110 may have various shapes, arrangements, orconfigurations according to a pattern to form by photolithographyprocess. The phase shift pattern 110 may have thickness of about 130 nm.

The phase shift pattern 110 defines an opening OP. The opening OP mayhave a first width W1, and the phase shift pattern 110 may have a secondwidth W2. The sum of the first width W1 and the second width W2 is sameas a pitch P.

And then, an upper surface of the phase shift pattern 110 may be treatedby plasma hydrophilic treatment. The plasma hydrophilic treatment may beperformed by any suitable technique known in the art.

Referring to FIG. 5, a preliminary dielectric layer 120 a is formed onthe transparent substrate 100 on which the phase shift pattern 110 isformed. The preliminary dielectric layer 120 a may include dielectricmaterial. For example, the dielectric layer 120 may include polymethylmethacrylate (PMMA).

Referring to FIG. 6, a dielectric layer 120 is formed by removing anupper portion of the preliminary dielectric layer 120 a. For example, athickness of the preliminary dielectric layer 120 a may be decreased byan ashing process. Accordingly, the dielectric layer 120 is formed.According to some embodiments, the dielectric layer 120 may havethickness no less than about 10 nm and no more than 500 nm. According tosome embodiments, the dielectric layer 120 may have a thickness of about40 nm.

Referring to FIG. 7, a negative refractive-index meta material layer 130made of an appropriate metal is formed on the first dielectric layer 120using a suitable deposition method, for example, by way of an E-beamevaporation method. The negative refractive-index meta material layer130 may include a metal or conductive material such as silver, gold,and/or aluminum.

FIG. 8 is a cross-sectional view illustrating a mask forphotolithography according to an example embodiment of the presentinvention.

Referring to FIG. 8, a mask for photolithography includes a transparentsubstrate 100, a phase shift pattern 110, a first dielectric layer 120,a negative refractive-index meta material layer 130, and a seconddielectric layer 140.

The transparent substrate 100 passes light, and does not change phase ofthe light. For example, the transparent substrate 110 may includequartz.

The phase shift pattern 110 is arranged or formed on the transparentsubstrate 100. The phase shift pattern 110 changes a phase of light thatpasses through the phase shift pattern 110. The phase shift pattern 110may include any suitable phase shift material, such as chrome oxidenitride (CrOxNy), molybdenum silicide oxide nitride (MoSiOxNy), etc. Inaddition, the phase shift pattern 110 may have various shapes accordingto a pattern to form by photolithography process.

The phase shift pattern 110 includes chrome oxide and may have thicknessof about 130 nm. Accordingly, the phase shift pattern 110 may change aphase of light having about 365 nm of wavelength as 180° (reversal), andhas about 8% of transmissivity.

The phase shift pattern 110 defines an opening OP. Phase of light thatpasses the opening OP is not changed. The opening OP may have a firstwidth W1, and the phase shift pattern 110 may have a second width W2.The sum of the first width W1 and the second width W2 is same as a pitchP. Each of the first width W1 and the second width W2 may be less than 2μm. In addition, the phase shift pattern 110 may have a more precisepattern, so that each of the first width W1 and the second width W2 maybe less than about 500 nm. Thus, the pitch P may be less than about 4μm, or the pitch P may be less than about 1 μm.

The first dielectric layer 120 is arranged on the substrate 100 on whichthe phase shift pattern 110 is arranged. The first dielectric layer 120may include a suitable dielectric material. For example, the firstdielectric layer 120 may include polymethyl methacrylate (PMMA).

The first dielectric layer 120 may include polymethyl methacrylate(PMMA) and have thickness greater than about 10 nm and smaller thanabout 500 nm. According to some embodiments, the first dielectric layer120 may include polymethyl methacrylate (PMMA), and have a thicknessabout 40 nm.

The negative refractive-index meta material layer 130 is arranged on thefirst dielectric layer 120. The negative refractive-index meta materiallayer 130 may be formed using a suitable deposition method, for example,by using a metal E-beam evaporate method. For example, the negativerefractive-index meta material layer 130 may include a metal orconductive material such as silver, gold, aluminum, and the like. Thenegative refractive-index meta material layer 130 may have a thicknessless than about 150 nm, and according to some embodiments, may have athickness of about 35 nm.

The negative refractive-index meta material layer 130 may generatesurface plasmonic resonance or phonon resonance. The surface plasmonicresonance or phonon resonance are induced to define an evanescence wavewhich exponentially decays according to a propagation distance of anelectromagnetic wave and the method uses the decayed evanescence wavephenomenon for accurate suppression of light transfer in aphotolithography process.

The second dielectric layer 140 is arranged on the negativerefractive-index meta material layer 130. The second dielectric layer140 may include a suitable dielectric material. For example, the seconddielectric layer 140 may include polymethyl methacrylate (PMMA).

FIG. 9 is a cross-sectional view illustrating a method of manufacturinga substrate using a mask for photolithography according to an exampleembodiment of the present invention.

Referring to FIG. 9, a mask for photolithography includes a transparentsubstrate 200, a light blocking pattern 210, a phase shift pattern 212,a dielectric layer 220, and a negative refractive-index meta materiallayer 230.

The transparent substrate 200 passes light, and does not change phase ofthe light. For example, the transparent substrate 200 may includequartz.

The light blocking pattern 210 is arranged on the transparent substrate200. The light blocking pattern 210 may include light blocking material.For example, the light blocking pattern 210 may include chrome (Cr). Thelight blocking pattern 210 defines a first opening OP1 having a firstwidth W1 and a second opening OP2 having a third width W3. The lightblocking pattern 210 has a second width W2. The sum of the first widthW1 and the second width W2 is same as a pitch P.

The phase shift pattern 212 has the first width W1 and is arranged inthe first opening OP1 which is defined by the light blocking pattern210. The phase shift pattern 212 changes a phase of light which passesthrough the phase shift pattern 212. The phase shift pattern 212 mayinclude a suitable phase shift material, such as chrome oxide nitride(CrOxNy), molybdenum silicide oxide nitride (MoSiOxNy), etc.

Each of the first width W1, the second width W2, and the third width W3may be less than about 2 μm. In addition, the mask may have a moreprecise pattern, such that each of the first width W1 and the secondwidth W2 may be less than about 500 nm. Thus, the pitch P may be lessthan about 4 μm, or the pitch P may be less than about 1 μm.

The dielectric layer 220 is arranged on the transparent substrate 200 onwhich the light blocking pattern 210 and the phase shift pattern 212 arearranged. The dielectric layer 220 may include a suitable dielectricmaterial. For example, the dielectric layer 220 may include polymethylmethacrylate (PMMA).

The negative refractive-index meta material layer 230 is arranged on thedielectric layer 220. The negative refractive-index meta material layer230 may be formed by using a metal E-beam evaporate method. For example,the negative refractive-index meta material layer 230 may include ametal or conductive material such as silver, gold, aluminum, and thelike.

Hereinafter, a method of manufacturing a substrate using the mask willbe described.

The mask is arranged over a substrate 10 to face the substrate 10. Andthen, a photoresist layer on the substrate 10 is exposed by light thatpasses through the mask.

The photoresist layer is formed on the substrate 10. The substrate 10may be a base substrate or a substrate having a base substrate and ametal pattern on the substrate. For example, the substrate 10 may be atransparent insulation substrate such as a glass substrate ortransparent plastic substrate. The metal pattern may include a thin filmtransistor.

The photoresist layer includes a photoresist composition. Thephotoresist composition may include a positive photoresist compositionin which a portion of the positive photoresist composition that isexposed to light becomes soluble to a developer. For example, thephotoresist composition may include an acid generator, a resin withincreased alkali solubility due to an acid-catalyzed reaction, an alkalimetallic salt, and an organic solvent.

In addition, the photoresist composition may include a negativephotoresist composition in which a portion of the positive photoresistcomposition that is not exposed to light becomes soluble to a developer.For example, the photoresist composition may include an ethylencallyunsaturated compound, a photoiniciator, a thermosetting composition,and/or an organic solvent. In this case, the photoresist pattern may beformed on the contrary to a case of positive photoresist composition.

Light passes through the opening OP of the mask, so that the photoresistlayer is exposed to the light.

At that time, an exposure apparatus positioned above the mask suppliesthe light, and then the light is passed through the mask to thephotoresist layer on the substrate 10. Due to plasmonic resonance orphonon resonance generated by the dielectric layer 220 and the negativerefractive-index meta material layer 230, an evanescent wave of thelight is transmitted to the photoresist layer on the substrate 10.

After that, an exposed portion of the photoresist layer is removed(e.g., by a developer). A photoresist pattern 20 is formed by removingthe exposed portion of the photoresist layer. And then, the substrate 10is partially etched using the photoresist pattern 20.

And then, the remaining photoresist pattern may be removed.

Accordingly, a pattern having the pitch P, the first width W1 and thesecond width W2 may be formed on the substrate 10.

FIG. 10 is a cross-sectional view illustrating a method of manufacturinga substrate using a mask for photolithography according to an exampleembodiment of the present invention.

Referring to FIG. 10, a mask for photolithography includes a transparentsubstrate 300, a light blocking pattern 310, a dielectric layer 320, anda negative refractive-index meta material layer 330.

The transparent substrate 200 passes light, and does not change a phaseof the light. For example, the transparent substrate 200 may includequartz.

The light blocking pattern 210 is arranged on the transparent substrate200. The light blocking pattern 210 may include a suitable lightblocking material.

A convex portion 302 and a concave portion 304 are formed on thetransparent substrate 300 where the light blocking pattern 210 is notarranged. The concave portion 304 has a first width W1, and the convexportion 302 has a second width W2. A pattern corresponding to the firstwidth W1 is formed on a substrate, so that a pitch P may besubstantially same as the first width W1.

The dielectric layer 320 is arranged on the transparent substrate 300 onwhich the light blocking pattern 310 is arranged. The dielectric layer320 may include a suitable dielectric material. For example, thedielectric layer 320 may include polymethyl methacrylate (PMMA).

The negative refractive-index meta material layer 330 is arranged on thedielectric layer 320. The negative refractive-index meta material layer330 may be formed using a suitable deposition method, for example, byusing a metal E-beam evaporate method. For example, the negativerefractive-index meta material layer 330 may include a metal orconductive material such as silver, gold, aluminum, and the like.

Hereinafter, a method of manufacturing a substrate using the mask willbe described.

The mask is arranged over a substrate 10 to face the substrate 10. Andthen, a photoresist layer on the substrate 10 is exposed by light whichpasses through the mask.

An exposure apparatus positioned above the mask supplies the light, andthen the light is passed through the mask to the photoresist layer onthe substrate 10. Due to plasmonic resonance or phonon resonancegenerated by the dielectric layer 320 and the negative refractive-indexmeta material layer 330, an evanescent wave of the light is transmittedto the photoresist layer on the substrate 10.

The photoresist layer includes a photoresist composition. Thephotoresist composition may include a positive photoresist compositionin which a portion of the positive photoresist composition that isexposed to light becomes soluble to a developer. For example, thephotoresist composition may include an acid generator, a resin whichwith increased alkali solubility due to an acid-catalyzed reaction, analkali metallic salt, and/or an organic solvent.

In addition, the photoresist composition may include a negativephotoresist composition in which a portion of the positive photoresistcomposition that is not exposed to light becomes soluble to a developer.For example, the photoresist composition may include ethylencallyunsaturated compound, photoiniciator, thermosetting composition andorganic solvent. In this case, the photoresist pattern may be formed onthe contrary to a case of positive photoresist composition.

After that, an exposed portion of the photoresist layer is removed(e.g., by a developer). A photoresist pattern 20 is formed by removingthe exposed portion of the photoresist layer. And then, the substrate 10is partially etched using the photoresist pattern 20.

And then, the remaining photoresist pattern may be removed.

Accordingly, a pattern corresponding to the boundary of the convexportion 302 and the concave portion 304 of the mask may be formed. Thus,the pattern corresponding to the pitch P may be formed.

According to example embodiments of the present invention, the mask forphotolithography includes the dielectric layer and the negativerefractive-index meta material layer, so that the mask may have aresolution improvement as a super lens. In addition, the mask includesthe phase shift pattern, so that resolution of the mask may be furtherimproved.

In addition, according to the method of manufacturing a substrate usingthe mask, the upper surface of the phase shift pattern of the mask istreated by plasma hydrophilic treatment, so that quality of thedielectric layer may be improved. In addition, according to the method,thickness of the dielectric layer may be decreased by an ashing processof the preliminary dielectric layer, so that a desired thickness of thedielectric layer may be obtained.

The foregoing is illustrative of the present invention and is not to beconstrued as limiting thereof. Although a few example embodiments of thepresent invention have been described, those skilled in the art willreadily appreciate that many modifications are possible in the exampleembodiments without materially departing from the novel teachings andaspects of the present invention. Accordingly, all such modificationsare intended to be included within the scope of the present invention asdefined in the claims. In the claims, means-plus-function clauses areintended to cover the structures described herein as performing therecited function and not only structural equivalents but also equivalentstructures. Therefore, it is to be understood that the foregoing isillustrative of the present invention and is not to be construed aslimited to the specific example embodiments disclosed, and thatmodifications to the disclosed example embodiments, as well as otherexample embodiments, are intended to be included within the scope of theappended claims, and their equivalents. Aspects of embodiments of thepresent invention are defined by the following claims, with equivalentsof the claims to be included therein.

What is claimed is:
 1. A mask for photolithography comprising: a transparent substrate; a light blocking material across the transparent substrate comprising a plurality of first openings and a plurality of second openings spaced apart from the first opening; a phase shift pattern on the transparent substrate and configured to change a phase of light, wherein the phase shift pattern is located in the plurality of first openings and not located in the plurality of second openings; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.
 2. The mask of claim 1, wherein a portion of the light blocking material has a second width and the first openings have a first width, wherein a pitch is defined by a sum of the first width and the second width, and the pitch is less than 4 micrometers.
 3. The mask of claim 2, wherein the pitch is less than 1 micrometers.
 4. The mask of claim 1, wherein the phase shift pattern comprises at least one of chrome oxide nitride (CrOxNy) and molybdenum silicide oxide nitride (MoSiOxNy).
 5. The mask of claim 4, wherein a thickness of the phase shift pattern is 130 nanometers.
 6. The mask of claim 4, wherein the dielectric layer comprises polymethyl methacrylate (PMMA).
 7. The mask of claim 4, wherein a thickness of the dielectric layer is 40 nanometers.
 8. The mask of claim 1, wherein the negative refractive-index meta material layer is configured to generate a surface plasmonic resonance or phonon resonance.
 9. The mask of claim 8, wherein a thickness of the negative refractive-index meta material layer is 30 nanometers.
 10. The mask of claim 1, further comprising a second dielectric layer on the negative refractive-index meta material layer.
 11. A method of manufacturing a mask for photolithography, the method comprising: forming a light blocking material across a transparent substrate; forming a plurality of first openings and a plurality of second openings spaced apart from the first opening in the light blocking material; forming a phase shift pattern on the transparent substrate in the first openings and not in the second openings; forming a dielectric layer on the transparent substrate; and forming a negative refractive-index meta material layer on the dielectric layer.
 12. The method of claim 11, wherein a portion of the light blocking material has a second width and the first openings have a first width, wherein a pitch is defined by a sum of the first width and the second width, and the pitch is less than 4 micrometers.
 13. The method of claim 12, wherein the phase shift pattern comprises at least one of chrome oxide nitride (CrOxNy) and molybdenum silicide oxide nitride (MoSiOxNy).
 14. The method of claim 13, further comprising performing a plasma hydrophilic treatment on an upper surface of the phase shift pattern.
 15. The method of claim 14, further comprising ashing the dielectric layer.
 16. The method of claim 15, wherein a thickness of the dielectric layer is 40 nanometers.
 17. The method of claim 11, wherein the negative refractive-index meta material layer comprises at least one or more of silver, gold, and aluminum.
 18. The method of claim 11, wherein a thickness of the negative refractive-index meta material layer is 35 nanometers.
 19. The method of claim 18, further comprising providing a second dielectric layer on the negative refractive-index meta material layer.
 20. A method of manufacturing a substrate using a mask for photolithography, wherein the mask comprises: a transparent substrate; a light blocking material across the transparent substrate comprising a plurality of first openings and a plurality of second openings spaced apart from the first opening; a phase shift pattern on the transparent substrate and configured to change a phase of light, wherein the phase shift pattern is located in the plurality of first openings and not located in the plurality of second openings; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer, the method comprising: arranging the substrate on which a photoresist layer is formed to face the mask; exposing light to the photoresist layer through the mask, wherein the negative refractive-index meta material layer generates surface plasmonic resonance or phonon resonance, the surface plasmonic resonance or phonon resonance are induced to define an evanescence wave which exponentially decays according to a propagation distance of an electromagnetic wave for accurate suppression of light transfer in a photolithography process; and forming a photoresist pattern by developing the photoresist layer using a developer. 